SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

7.5. HIGH-FREQUENCY BEHAVIOR OF A BJT 337 Following the analysis in section 7.5 (equation 7.5.16 through equation 7.5.26) and us ...

338 CHAPTER 7. TEMPORAL RESPONSE OF DIODES AND BIPOLAR TRANSISTORS If this is inserted into equation 7.5.56, and the integration ...

7.5. HIGH-FREQUENCY BEHAVIOR OF A BJT 339 B rπ Cπ CBE CBC gmVBE R 0 C E Element re rπ Cπ R 0 IE kBT b 0 re Value IC VA re tB+tC ...

340 CHAPTER 7. TEMPORAL RESPONSE OF DIODES AND BIPOLAR TRANSISTORS = rπ Cπ CBE CBC Iin ( jω) vBE Iin ( jω) Io ( jω) vBE gmVBE Io ...

7.5. HIGH-FREQUENCY BEHAVIOR OF A BJT 341 This expression reduces to Io(jω) Iin(jω) = rπ re [ 1 −jωCBCre 1+jωrπ(Cin+CBC) ] (7.5. ...

342 CHAPTER 7. TEMPORAL RESPONSE OF DIODES AND BIPOLAR TRANSISTORS (a) (b) rπ Cin CBC gmVBE vBE rb ib Cin CBC vBE rb Zin ib ib j ...

7.5. HIGH-FREQUENCY BEHAVIOR OF A BJT 343 Zo CBC 1 ωTCBC Figure 7.19: Equivalent circuit representation of the output impedanceZ ...

344 CHAPTER 7. TEMPORAL RESPONSE OF DIODES AND BIPOLAR TRANSISTORS Zo CBC 1 ωTCBC Figure 7.20: Equivalent circuit representation ...

7.6. BIPOLAR TRANSISTORS: A TECHNOLOGY ROADMAP 345 Zo CBC 1 ωTCBC 1 ωTCBC RL= 1 ω^2 CBC ZL=Zo* Figure 7.21: Conjugately matched ...

346 CHAPTER 7. TEMPORAL RESPONSE OF DIODES AND BIPOLAR TRANSISTORS Silicon bipolar technology Advanced fabrication techniques a ...

7.6. BIPOLAR TRANSISTORS: A TECHNOLOGY ROADMAP 347 are: (i) amorphous Si, which has a large “effective bandgap” (∼1.5 eV). The p ...

348 CHAPTER 7. TEMPORAL RESPONSE OF DIODES AND BIPOLAR TRANSISTORS –10 –8 –6 –4 – 2 4 8 12 16 20 nfully depleted-region 24 } Nd ...

7.7. PROBLEMS 349 whereCis in units ofμFandVis in volts. Calculate the built-in voltage and the depletion width at zero bias. Wh ...

350 CHAPTER 7. TEMPORAL RESPONSE OF DIODES AND BIPOLAR TRANSISTORS width of the p-regionL 2 >> Ln. Calculate the depletion ...

7.7. PROBLEMS 351 n AlGaAs GaAs p n Figure 7.25: Band diagram for device in problem 7.14. Problem 7.14Consider a bipolar transis ...

352 CHAPTER 7. TEMPORAL RESPONSE OF DIODES AND BIPOLAR TRANSISTORS RE=1μm RC=3μm (RC - R ) n h p RE RB RC B Figure 7.26: Figure ...

7.7. PROBLEMS 353 VS/2 VS WC/2 WC VS/2 VS WC/2 WC Figure 7.27: Figure for problem 7.17 1000 A 3500 A Emitter Base Collector Figu ...

354 CHAPTER 7. TEMPORAL RESPONSE OF DIODES AND BIPOLAR TRANSISTORS t vs vs 0 1 2 Figure 7.29: Figure for problem 7.18. p ++ i n ...

7.8. DESIGN PROBLEMS 355 V (cm/s) 2 x 10 7 1 x 10^7 .3 Collector Voltage Drop (eV) Figure 7.31: Figure for problem 7.19. collect ...

Chapter 8 FIELD EFFECT TRANSISTORS 8.1 INTRODUCTION ................................. In this and the next chapter we will exami ...