SEMICONDUCTOR DEVICE PHYSICS AND DESIGN
5.6. SEMICONDUCTOR HETEROJUNCTIONS 237 smaller than that seen by holes by an amountΔEv, and so the corresponding ratio of electr ...
238 CHAPTER 5. SEMICONDUCTOR JUNCTIONS Figure 5.12: Solutions to example 5.3 kBT [ ln ( p NV ) +A 1 p NV +A 2 ( p NV ) 2 ] =0.01 ...
5.6. SEMICONDUCTOR HETEROJUNCTIONS 239 Ec Ev + Fe = -e Fh = +e (a) Ec Ev + Fe = 0 Fh = +e (b) Ec Ev + Fh = +e (c) Fe = -e E E Eh ...
240 CHAPTER 5. SEMICONDUCTOR JUNCTIONS cannot be achieved by pure electric fields in homogeneous materials. These fields, which ...
5.7. PROBLEMS 241 Problem 5.2If a current density of 105 A/cm^2 flows in the interconnect of problem 5.1 to, calculate the poten ...
242 CHAPTER 5. SEMICONDUCTOR JUNCTIONS Problem 5.13 In some narrow-bandgap semiconductors, it is difficult to obtain a good Scho ...
5.7. PROBLEMS 243 quality and can be easily affected by fabrication steps. In ap-ndiode, on the other hand, the built-in voltage ...
244 CHAPTER 5. SEMICONDUCTOR JUNCTIONS Problem 5.20 To fabricate very high-quality ohmic contacts on a large-bandgap material on ...
5.8. FURTHER READING 245 Linear Parabolic EC EC EV EV 50nm 50nm GaInAs InP GaInAs InP Figure 5.15: Figure for problem 5.26. 5.8 ...
Chapter 6 BIPOLAR JUNCTION TRANSISTORS 6.1 INTRODUCTION ................................. The bipolar junction transistor was th ...
6.1. INTRODUCTION 247 0 1 2 3 4 5 6 7 0 0.5 1 1.5 2 2.5^0 4 8 12 16 J (mA/mme 2 ) Vce (V) Ajbe= 0.6 x 4.3 μm^2 Ib step = 85 uA V ...
248 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS Fluid flow Fluid flow in a confined region A potential energy profile created to sto ...
6.2. BIPOLAR TRANSISTOR: A CONCEPTUAL PICTURE 249 Emitter contact n+ n+ n+ n+ p B E C p p+ p+ p+ p+ p nepitaxy n+buried layer p- ...
250 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS +++++ ––––– –––– n = N~ dc n = N~ de p = N~ ab Wb Electron current Hole current ...
6.2. BIPOLAR TRANSISTOR: A CONCEPTUAL PICTURE 251 have IC=BIEn (6.2.1) whereIEnis the electron part of the emitter current and t ...
252 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS C IC R 2 B n p n E R 1 V 1 V 2 IB IE Collector current Collector Base Emitter Base c ...
6.3. STATIC CHARACTERISTICS: CURRENT - VOLTAGE RELATION 253 while the base charge is injected from the “side” of the device, as ...
254 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS Emitter contact Base contact SiO 2 AA' p n n IC InEB= Emitter current injected into ...
6.3. STATIC CHARACTERISTICS: CURRENT - VOLTAGE RELATION 255 Mode of operation EBJ bias CBJ bias Forward active Forward (VBE> ...
256 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS pe(xe = 0) nb(x) Emitter VBE Base VCB Collector peo pbo nco pco IE |EBJ| | CBJ | dep ...
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