SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

6.3. STATIC CHARACTERISTICS: CURRENT - VOLTAGE RELATION 257 diffusion coefficientsDbandDein the base and emitter, respectively, ...

258 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS Using the results shown in the first part of equation 6.3.9 atxb=Wbn,we have InBC= − ...

6.3. STATIC CHARACTERISTICS: CURRENT - VOLTAGE RELATION 259 The first part represents the hole current injected from the base in ...

260 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS Minority charge density Holes Electrons Holes peo nbo n co IE IB IC Minority charge ...

6.3. STATIC CHARACTERISTICS: CURRENT - VOLTAGE RELATION 261 VEB Common base Common emitter Common collector E B E C B E C B IE C ...

262 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS [ ( ) ] IR = ICS[ ( ) ]exp^ –1 αRIR αFIF VΒΕ VΒC + – IΕ IC E C IR IF = IES e ...

6.4. DEVICE DESIGN AND DEVICE PERFORMANCE PARAMETERS 263 the forward active mode of the device so that we have the conditions eV ...

264 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS unity. We have from equation 6.3.16 and equation 6.3.17 (in the forward active mode, ...

6.5. BJT DESIGN LIMITATIONS: NEED FOR BAND TAILORING 265 6.5 BJT DESIGN LIMITATIONS: NEED FOR BAND TAILORING AND HBTs So far in ...

266 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS The expression is reasonable up to a doping of 1019 cm−^3. At higher doping levels, ...

6.5. BJT DESIGN LIMITATIONS: NEED FOR BAND TAILORING 267 NEEDS CHALLENGES DEMANDS AND PROBLEMS FOR A BIPOLAR JUNCTION TRANSISTOR ...

268 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS B arrier for el ectron injection B arrier for hole injection HOMOJUNCT ION E mi tter ...

6.5. BJT DESIGN LIMITATIONS: NEED FOR BAND TAILORING 269 6.5.1 The Generalized Moll-Ross Relationship ................. This ver ...

270 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS This leads to the generalized Moll-Ross relation Jn=− e·exp ( eVBE kBT ) ∫Wbn 0 ( p( ...

6.5. BJT DESIGN LIMITATIONS: NEED FOR BAND TAILORING 271 Intrinsic Transistor Cin b 0 re Rbb Figure 6.13: Basic BJT small-signal ...

272 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS FET BJT Fmin 1+b-1/2 1 f Figure 6.14: Minimum noise figure versus frequency for a BJ ...

6.5. BJT DESIGN LIMITATIONS: NEED FOR BAND TAILORING 273 IB A 1 A 2 IB IB Aj Aj+1 IB IB VRef Vin AN Decoder Digital Output Rμ Rμ ...

274 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS 6.6 SECONDARY EFFECTS IN REAL DEVICES ................. In the derivations of the bi ...

6.6. SECONDARY EFFECTS IN REAL DEVICES 275 as np,C→ 0 ve→∞ wherenp,Cis the electron concentration at the base-collector junction ...

276 CHAPTER 6. BIPOLAR JUNCTION TRANSISTORS |E| dE dx= e (Nd,C−np,C) Figure 6.17: (a) Schematic diagram of a typical bipolar tr ...