0195136047.pdf
354 SEMICONDUCTOR DEVICES −VZ VZ Dr Df RZ RZ i v 1 0 i Break points vv i (a) (c) Ideal diode Ideal diode (b) + Figure 7.2.7Zener ...
7.2 DIODES 355 vout= RS RS+RZ ( VZ+ RZ RS VS−RZiout ) ForRZ<< RS,RZ|VS/RS−iout|<< VZ, in which case vout∼=VZ Thus, t ...
356 SEMICONDUCTOR DEVICES Forv→−∞,i=0 sinceD 1 will be off andD 2 on. WithD 1 at its breakpoint, the circuit is drawn in Figure ...
7.2 DIODES 357 WithD 2 at its breakpoint, the circuit is drawn in Figure E7.2.7(c). It follows thatv 1 =10 V andD 1 must be on t ...
358 SEMICONDUCTOR DEVICES iL(t) vS(t) = VS sin ωt vS(t) vS(t) C RL iL VS t 1 t 2 RL CRL Capacitor charges Time constant Capacito ...
7.3 BIPOLAR JUNCTION TRANSISTORS 359 vS(t) = VS sin ωt (a) Primary Ideal transformer 1:2 Secondary Ideal diode D 1 D 1 Ideal dio ...
360 SEMICONDUCTOR DEVICES npn C (collector) C (collector) (a) E (emitter) E (emitter) B (base) + + − − (base) B iC iB vCE vBE pn ...
7.3 BIPOLAR JUNCTION TRANSISTORS 361 npn C (a) E iE vBE iB iC = iB + iC = iB + iC − + vCB B − + pnp C (b) E iE vEB iB iC + − vBC ...
362 SEMICONDUCTOR DEVICES 7.3.8(c)ICEOmay often be ignored at room temperature, in which case the model reduces to an open circu ...
7.3 BIPOLAR JUNCTION TRANSISTORS 363 Collector current iC, mA Saturation region Linear active region Collector–emitter voltage v ...
364 SEMICONDUCTOR DEVICES Current– controlled current source (fixed) iB > 0 iC = βiB iE = iC + iB = (β + 1)iB vCE > Vγ vBE ...
7.3 BIPOLAR JUNCTION TRANSISTORS 365 10 Load line 8 iC, mA iB=μ100 A 80 Aμ 60 Aμ 40 Aμ 20 Aμ iB= 0 vCE,V (b) 6 4 2 0 02468101214 ...
366 SEMICONDUCTOR DEVICES EXAMPLE 7.3.3 Considering the circuit shown in Figure E7.3.3(a), find the state of operation and opera ...
7.4 FIELD-EFFECT TRANSISTORS 367 iB= 19. 3 384 = 0 .05 mA iC= 80 iB=4mA Hence, vCE= 20 − 4 × 81 iB= 3 .8V which does satisfy the ...
368 SEMICONDUCTOR DEVICES G (gate) Gate D (drain) S (source) G (gate) D (drain) S (source) Source Metal contact Metal contact Co ...
7.4 FIELD-EFFECT TRANSISTORS 369 Figure 7.4.3JFET characteristics.(a)Idealized static characteristics.(b)Practical static charac ...
370 SEMICONDUCTOR DEVICES Also shown in Figure 7.4.3(a) is abreakdown voltage,denoted by BVDGO, at which breakdown in the drain– ...
7.4 FIELD-EFFECT TRANSISTORS 371 Solution (a) From Equation (7.4.1), 4 × 10 −^3 =IDSS ( 1 + − 1 VP ) 2 and 6. 25 × 10 −^3 =IDSS ...
372 SEMICONDUCTOR DEVICES The input resistance of a MOSFET is even higher than that of the JFET (typically on the order of 10^10 ...
7.4 FIELD-EFFECT TRANSISTORS 373 D S + + − − G vGS > 0 vDS > 0 iD n+ n+ Electrons Holes (a) Electric field D n–type channe ...
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