SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

4.3. CURRENT FLOW: P-N DIODE UNDER BIAS 157 4.3.1 DriftandDiffusionCurrentsintheBiasedDiode ............. Thep-ndiode characteri ...

158 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES –– –– ––– –– – } } Electron density in the p-side depletion edge EFp EFn ...

4.3. CURRENT FLOW: P-N DIODE UNDER BIAS 159 forx>Wn δnp(x)=Δnpoexp ((x+Wp)/Ln) = npo[ exp (eV /kBT)−1] exp [(x+Wp)/Ln] (4.3.1 ...

160 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES 4.3.2 Minority and Majority Currents in thep-nDiode Thep-ndiode is a bipola ...

4.3. CURRENT FLOW: P-N DIODE UNDER BIAS 161 p n Wp 0Wn n( x) p( x) np pn Depletion Region mi no rity char ge (a) (b) (c) np+np p ...

162 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES p n V I I I Io V Diode symbol Reverse current due to drift current in the d ...

4.4. REAL DIODES:DEFECTS AND CARRIER GENERATION 163 –Wp 0 Ohmic contact Ohmic contact Injected charge δnp(x) –Wp Wn Wn δpn(x) –W ...

164 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES p n + + + -wp 0 wn In Ip IR IG Figure 4.10: Qualitative diagram of all curr ...

4.4. REAL DIODES:DEFECTS AND CARRIER GENERATION 165 EV EFp EC Eip EFn Ein ψ(x) ψ’(x) EV EF EC EF Eip Ein (a) (b) Figure 4.11: Ba ...

166 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES X = 0 x ψ ψ x Towards p Towards n Maximum Recombination Plane Figure 4.12: ...

4.4. REAL DIODES:DEFECTS AND CARRIER GENERATION 167 U X = 0 Figure 4.13: Schematic of the net recombination rate as a function o ...

168 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES The generation-recombination current therefore has an exponential dependenc ...

4.4. REAL DIODES:DEFECTS AND CARRIER GENERATION 169 ( ( Region 1 Region 2 HIGH INJECTION REGION Dominated by generation- recomb ...

170 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES P-contact N-contact Diode on dislocated GaN Diode on LEO GaN p-GaN n-GaN Si ...

4.4. REAL DIODES:DEFECTS AND CARRIER GENERATION 171 forward bias of 0.6 V, the diffusion current is 1. 07 × 10 −^4 A, while the ...

172 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES The prefactors to the recombination-generation current is IGR^0 (0.5V)=1. 4 ...

4.5. REVERSE BIAS CHARACTERISTICS 173 np0 Wp Wn pn0 np(x) Pn(x) VR x=wn + x x=-wp x=0 x Figure 4.16: Here the minority carrier ...

174 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES or Gth=αrn^2 i In non equilibrium recognizing thatGthis a function of tempe ...

4.5. REVERSE BIAS CHARACTERISTICS 175 ∴Δpn(x−Wn)=pn 0 exp ( − x−Wn Lp ) which can be rewritten forx≥Wn pn(x)=pn 0 [ 1 −exp ( − x ...

176 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES Minority carrier concentration Pn=0 pn0 slope Pn=0 Slope Δpn=pn 0 ()eeV/kBT ...