SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

4.6. HIGH-VOLTAGE EFFECTS IN DIODES 177 given bynnoexp (−e(Vbi−Vr)/kBT)ornp 0 exp (eVr/kBT), but sinceVris negative this is very ...

178 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES 4.7 Avalanche Breakdown in ap-njunction ...................... Consider ap− ...

4.7. AVALANCHE BREAKDOWN IN AP-NJUNCTION 179 pin Figure 4.19: Band diagram for ap−i−ndiode showing the avalanche ion ...

180 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES Jp Jn0 Jp0 Jn JTotal wa Figure 4.20: Majority and minority currents in a re ...

4.7. AVALANCHE BREAKDOWN IN AP-NJUNCTION 181 J V Total Ideal M ∞ Figure 4.21: Current-Voltage characteristics for ap−i−ndiode in ...

182 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES Ec Ev Ec Ev E Eg –x 1 0 X Potential energy (a) (b) Forbidden gap –x 2 EFp E ...

4.8. DIODE APPLICATIONS: AN OVERVIEW 183 (Zener diode) p n Vo I I V Forward current Reverse saturation current Vout=Vz Reverse c ...

184 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES DIODE PROPERTIES CURRENT SOURCE NON-LINEAR I-V AND C-V EMISSION AND ABSORPT ...

4.8. DIODE APPLICATIONS: AN OVERVIEW 185 RL Variable current source controlled by light, voltage, etc. I V II I III IV PHOTODETE ...

186 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES p n -wp 0 wn n pn^0 p 0 -Wp 0 Wn x Ln Lp Δpn Δnp (a) (b) V J GL=0 increasin ...

4.8. DIODE APPLICATIONS: AN OVERVIEW 187 A similar set of equations for electrons gives us the following expression fornp(x)in t ...

188 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES p n RL Isc ID I = Isc-ID G RL Isc ID I = Isc-ID VIRD L= Figure 4.26: Equiva ...

4.8. DIODE APPLICATIONS: AN OVERVIEW 189 In a solar cell configuration the forward bias is not explicitly applied across the cel ...

190 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES A B (Signal) AB (Local Oscillator) (Output to load) Figure 4.27: Mixer symb ...

4.8. DIODE APPLICATIONS: AN OVERVIEW 191 4.8.14 that the second-order nonlinearity also produces a second harmonic and a DC term ...

192 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES Vin VO Input Output C Vx IL L Time Vx Inductor current T ton toff (a) (b) F ...

4.9. LIGHT EMITTING DIODE (LED) 193 have no voltage drop in the forward direction and no leakage current in the reverse directio ...

194 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES InSb PbS Ge Si GaAs CdSe GaP CdS SiC GaN ZnS HgCdTe GaAs1-yPy Infrared Red ...

4.9. LIGHT EMITTING DIODE (LED) 195 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 50 20 10 5 2 1 0.5 0.2 0.1 0.05 –OH absorption peaks Inf ...

196 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES hv Substrate p n hv Substrate p n hv hv Dislocations (a) (b) Figure 4.31: ( ...