SEMICONDUCTOR DEVICE PHYSICS AND DESIGN
4.9. LIGHT EMITTING DIODE (LED) 197 EC EF EV Eg Emission tQW Figure 4.32: Band diagram of a single quantum-well LED with the adv ...
198 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES EC EFp EV EFn hv Jparasitic (recombination in junction) Jn parasitic inject ...
4.9. LIGHT EMITTING DIODE (LED) 199 CONDUCTION BAND VALENCE BAND Eg Ec Ev k h^2 k^2 2m* h^2 k^2 2m* hω e h Figure 4.34: A schema ...
200 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES There are several important limits of the spontaneous rate: i.Inthecasewher ...
4.9. LIGHT EMITTING DIODE (LED) 201 10 –5 10 –6 10 –7 10 –8 10 –9 10 –10 1014 1015 1016 1017 1018 Nd (for holes injected into an ...
202 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES The radiative recombination depends upon the radiative lifetimeτrand the no ...
4.9. LIGHT EMITTING DIODE (LED) 203 From the previous example, we can see that forpequal to 1016 cm−^3 , we have (in the previou ...
204 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES The injection efficiency is now (assuming no recombination via traps) γinj= ...
4.10. PROBLEMS 205 Problem 4.4Consider the sample discussed in problem 4.2. The diode has a diameter of 50 μm. Also calculate th ...
206 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES Problem 4.13The diode of problem 4.12 has an area of 1 mm^2 and is operated ...
4.10. PROBLEMS 207 Problem 4.19When we derived the law of the junction, we assumed that the electron and hole quasi-fermi levels ...
208 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES 1.0μs; (b) 10.0 ns; and (c) 1.0 ns. Use the following parameters: A =10−^3 ...
4.10. PROBLEMS 209 Figure 4.37: Diode for problem 4.28. Problem 4.26Consider a GaAS p-n junction withNA=ND=10^17 cm−^3. Assume a ...
210 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES Figure 4.38: Diode for problem 4.29. growth is dropped after growth of thep ...
4.11. DESIGN PROBLEMS 211 structure in such cases. The width of then-region is smaller than the depletion region width at breakd ...
212 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES Problem 4.3Give a short discussion on why the reverse-bias current in an id ...
4.11. DESIGN PROBLEMS 213 Calculate the diode current at a forward bias of 0.5 V and 0.6 V at 300 K. What is the ideality factor ...
214 CHAPTER 4. JUNCTIONS IN SEMICONDUCTORS:P-NDIODES Problem 4.13We will define ap-ndiode to be “turned on” when the current den ...
4.12. FURTHER READING 215 R. S. Muller and T. I. Kamins,DeviceElectronicsforIntegratedCircuits (John Wiley and Sons, New York, ...
Chapter 5 SEMICONDUCTOR JUNCTIONS 5.1 INTRODUCTION ................................. The discussions in chapter 4 suggest that w ...
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