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Article NAND operation. For the NAND gate used in the experiment, the bias is slightly smaller than that of the inputs. Because ...
Extended Data Fig. 1 | Device fabrication and magnetic characterization. a, Schematics of main nanofabrication processes for mag ...
Article Extended Data Fig. 2 | DW inversion in a DW inverter with a straight IP region. a, STXM image sequence of DW inversion f ...
Extended Data Fig. 3 | Further experimental demonstration of the DW inverter. a, b, MOKE image sequences of DW inversion for inc ...
Article Extended Data Fig. 4 | Electrical control of DW motion through a cross structure. The directions of the current J and th ...
Extended Data Fig. 5 | Various cascaded DW logic circuits. a, AND gate fabricated by cascading one NAND gate and one NOT gate. b ...
Article Extended Data Fig. 6 | Magnetic DW logic elements. Red and blue shaded regions indicate regions that have OOP and IP ani ...
Extended Data Fig. 7 | DW velocity in a uniform OOP region of a racetrack and effective DW velocity in a NOT gate as a function ...
Article Extended Data Fig. 8 | Time sequence of MOKE images of the NAND gate during operation and corresponding schematics. The ...
Extended Data Fig. 9 | Propagation delay time for DW logic. a, Schematic showing the use of the propagation delay time to improv ...
Article Extended Data Fig. 10 | Hall measurement of logic operation in a NAND gate. a, Schematic and optical microscope image of ...
Nature | Vol 579 | 12 March 2020 | 219 Article Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111) Tse-An ...
220 | Nature | Vol 579 | 12 March 2020 Article Achieving the growth of mono-oriented hBN triangular flakes is an essential step ...
Nature | Vol 579 | 12 March 2020 | 221 presents perfect lattice coherence at the patching boundary (Extended Data Fig. 5g–j), in ...
222 | Nature | Vol 579 | 12 March 2020 Article the B 6 N 7 seed to the 0° (or 60°) orientation when docking to the A (or B) step ...
Nature | Vol 579 | 12 March 2020 | 223 eδ/EkBT (for a contact length of just five to six hexagons, the Boltzmann selectivity fac ...
Article Methods Growth of Cu (111) thin films The as-received sapphire substrates were first etched in a mixed H 2 SO 4 / H 3 PO ...
a ×100 objective lens (with a numerical aperture of 0.9). The signal was collected using the same objective lens, analysed with ...
Article Extended Data Fig. 1 | Analysis of Cu (111) crystal orientation on c-sapphire substrates. a, EBSD inverse pole figure (I ...
Extended Data Fig. 2 | Single-oriented hBN f lakes in different Cu grains. a, Optical micrograph of hBN molecules (triangles) gr ...
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