SEMICONDUCTOR DEVICE PHYSICS AND DESIGN

9.6. IMPORTANT ISSUES IN REAL MOSFETS 477 L N+ dj N+ dB L L L N+ N+ Figure 9.29: Schematic of the channel of a short-channel MOS ...

478 CHAPTER 9. FIELD EFFECT TRANSISTORS: MOSFET geometrical analysis gives Q′B QB =1− dj L [√ 1+ 2 dB dj − 1 ] AsLincreases,Q′B/ ...

9.6. IMPORTANT ISSUES IN REAL MOSFETS 479 0 0.0002 0.0004 0.0006 0.0008 0.001 0.0012 0.0014 0.0016 0.0018 0 0.2 0.4 0.6 0.8 1 1. ...

480 CHAPTER 9. FIELD EFFECT TRANSISTORS: MOSFET p+ p+ n+ R 2 R 3 R 1 R 4 n substrate pnp p+ n+ n+ npn p well DS I + V SD – (a) S ...

9.8. PROBLEMS 481 Discrete dopants fluctuations Low gate leakage Enhanced gate control Drain to source and Band to Band tunnelin ...

482 CHAPTER 9. FIELD EFFECT TRANSISTORS: MOSFET Problem 9.4An Al-gate MOS capacitor has an oxide thickness of 100A and an oxide ...

9.8. PROBLEMS 483 Calculate and plotIDversusVDSfor 0 ≤VDS≤ 5 VandforVGSvalues of 0, 1, 2, 3 volts. Also, draw the locus of theVD ...

484 CHAPTER 9. FIELD EFFECT TRANSISTORS: MOSFET Problem 9.16Consider ap-channel MOSFET with oxide thickness of 500A, and ̊ Nd=10 ...

9.9. DESIGN PROBLEMS 485 P-type Si OXIDE: 20 nm n+ n+ Gate 1016 cm-3 p-type doped 10^17 cm-3 Figure (c) p-type doped 10^17 cm-3 ...

486 CHAPTER 9. FIELD EFFECT TRANSISTORS: MOSFET n+-doped regions. The other parameters for the device are the following: Vfb = − ...

9.10. FURTHER READING 487 Na=5× 1016 cm−^3 at 300 K. The other parameters for the device are the following: Vfb = − 0 .5V μn = 6 ...

488 CHAPTER 9. FIELD EFFECT TRANSISTORS: MOSFET S. M. Sze,PhysicsofSemiconductorDevices (Wiley, New York, 1981). W. M. Werner, ...

Chapter 10 COHERENT TRANSPORT AND MESOSCOPIC DEVICES 10.1INTRODUCTION ................................. In quantum mechanics ele ...

490 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES PERFECT CRYSTALLINE MATERIALS WITH RIGID LATTICE “SMALL” DEGREE OF DIS ...

10.2. ZENER-BLOCH OSCILLATIONS 491 10.2 ZENER-BLOCHOSCILLATIONS ........................ In a perfect crystal electrons see a pe ...

492 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES E Zone edge (a) Zone edge (b) Reflection (c) G = (d) t = 0 t = t 1 t = ...

10.3. RESONANT TUNNELING 493 E 0 k π/a zone edge E 0 k 2π Reduced zone edge na a na Crystal Superlattice Figure 10.3: An increas ...

494 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES A B C D E 0 V 0 Ef Ec Vb Vb Vb E NERGY DISTANCE 4.0 3.0 2.0 1.0 0.0 AP ...

10.3. RESONANT TUNNELING 495 ψ = A 2 eik z^2 + B 2 e–ik z ψ = A 3 eik z^3 + B 3 e–ik z 3 ψ = A 1 eik z 1 +B 1 e–ik z^1 z 1 z 2 z ...

496 CHAPTER 10. COHERENT TRANSPORT AND MESOSCOPIC DEVICES 1 0.1 0.01 0.001 0.0001 0.00001 0 0.25 0.50 0.75 1 26 Å ELECTRON ENERG ...